دیتاشیت FQPF4N90C
مشخصات دیتاشیت
نام دیتاشیت |
FQP(F)4N90C
|
حجم فایل |
1374.919
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
12
|
مشخصات
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Manufacturer:
ON Semiconductor
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Series:
QFET®
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Packaging:
Tube
-
Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
900V
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Current - Continuous Drain (Id) @ 25°C:
4A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
4.2Ohm @ 2A, 10V
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Vgs(th) (Max) @ Id:
5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
22nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
960pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
47W (Tc)
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Operating Temperature:
-55°C ~ 150°C (TJ)
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Mounting Type:
Through Hole
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Supplier Device Package:
TO-220F
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Package / Case:
TO-220-3 Full Pack
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Base Part Number:
FQPF4
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detail:
N-Channel 900V 4A (Tc) 47W (Tc) Through Hole TO-220F